Part Details for 2SK2996 by Toshiba America Electronic Components
Overview of 2SK2996 by Toshiba America Electronic Components
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK2996
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 1804 |
|
RFQ | ||
|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 1443 |
|
$4.5000 / $9.0000 | Buy Now |
Part Details for 2SK2996
2SK2996 CAD Models
2SK2996 Part Data Attributes
|
2SK2996
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
2SK2996
Toshiba America Electronic Components
TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-67 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 252 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 45 W | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK2996
This table gives cross-reference parts and alternative options found for 2SK2996. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2996, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQPF13N06L | N-Channel QFET® MOSFET 60V, 10A, 110mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL | Fairchild Semiconductor Corporation | 2SK2996 vs FQPF13N06L |
FQPF13N06L | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 10 A, 110 mΩ, TO-220F, 1000-TUBE | onsemi | 2SK2996 vs FQPF13N06L |
FQPF13N06 | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | 2SK2996 vs FQPF13N06 |
H5N5007P-E | Nch Single Power Mosfet 500V 25A 225Mohm To-3P, TO-3P, /Tube | Renesas Electronics Corporation | 2SK2996 vs H5N5007P-E |
H5N5007P | 25A, 500V, 0.225ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Renesas Electronics Corporation | 2SK2996 vs H5N5007P |
FQPF13N06 | 9.4A, 60V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | 2SK2996 vs FQPF13N06 |