Part Details for 2SK3430-AZ by Renesas Electronics Corporation
Overview of 2SK3430-AZ by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK3430-AZ
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | 2SK3430-AZ - Switching N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 31 |
|
$1.7200 / $2.0200 | Buy Now |
Part Details for 2SK3430-AZ
2SK3430-AZ CAD Models
2SK3430-AZ Part Data Attributes:
|
2SK3430-AZ
Renesas Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
2SK3430-AZ
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | MP-25 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | PRSS0004AH | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Avalanche Energy Rating (Eas) | 137 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 84 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |