Datasheets
934056247118 by:

Power Field-Effect Transistor, 18A I(D), 55V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for 934056247118 by Nexperia

Overview of 934056247118 by Nexperia

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Part Details for 934056247118

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934056247118 Part Data Attributes

934056247118 Nexperia
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934056247118 Nexperia Power Field-Effect Transistor, 18A I(D), 55V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 33 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.086 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 73 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934056247118

This table gives cross-reference parts and alternative options found for 934056247118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934056247118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK9277-55A,118 BUK9277-55A - N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin Nexperia 934056247118 vs BUK9277-55A,118
BUK9277-55A Power Field-Effect Transistor, 18A I(D), 55V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Nexperia 934056247118 vs BUK9277-55A
934056247118 18A, 55V, 0.086ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, DPAK-3 NXP Semiconductors 934056247118 vs 934056247118
BUK9277-55A,118 BUK9277-55A - N-channel TrenchMOS logic level FET DPAK 3-Pin NXP Semiconductors 934056247118 vs BUK9277-55A,118
BUK9277-55A 18A, 55V, 0.086ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, DPAK-3 NXP Semiconductors 934056247118 vs BUK9277-55A
Part Number Description Manufacturer Compare
HUF75309D3ST Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation 934056247118 vs HUF75309D3ST
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation 934056247118 vs IRFZ30
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG 934056247118 vs IRFR1205TRPBF
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation 934056247118 vs HUF75321D3ST_NL
HUF76423D3 Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation 934056247118 vs HUF76423D3
2SK2018-01L Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(L), 3 PIN Fuji Electric Co Ltd 934056247118 vs 2SK2018-01L
IRFR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier 934056247118 vs IRFR024N
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation 934056247118 vs RFD14N05_NL
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi 934056247118 vs MTD1N50E1
HUFA75321D3 Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation 934056247118 vs HUFA75321D3

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