Datasheets
AN0110N by: Telcom Semiconductor Inc

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for AN0110N by Telcom Semiconductor Inc

Overview of AN0110N by Telcom Semiconductor Inc

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for AN0110N

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AN0110N Part Data Attributes

AN0110N Telcom Semiconductor Inc
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AN0110N Telcom Semiconductor Inc Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TELCOM SEMICONDUCTOR INC
Reach Compliance Code unknown
ECCN Code EAR99
Drain Current-Max (ID) 0.05 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 85 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.64 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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