Part Details for AOTF5B65M1 by Alpha & Omega Semiconductor
Overview of AOTF5B65M1 by Alpha & Omega Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AOTF5B65M1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1773-ND
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DigiKey | IGBT 650V 5A TO220 Min Qty: 1 Lead time: 22 Weeks Container: Tube |
837 In Stock |
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$0.7407 / $1.3700 | Buy Now |
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DISTI #
AOTF5B65M1
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TME | Transistor: IGBT, 650V, 5A, 10W, TO220F, Eoff: 0.12mJ, Eon: 0.09mJ Min Qty: 1 | 390 |
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$0.4640 / $0.7560 | Buy Now |
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ComSIT USA | 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode Insulated Gate Bipolar Transistor, 10A I(C), 650V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant | Europe - 1000 |
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RFQ |
Part Details for AOTF5B65M1
AOTF5B65M1 CAD Models
AOTF5B65M1 Part Data Attributes
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AOTF5B65M1
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOTF5B65M1
Alpha & Omega Semiconductor
IGBT 650V 5A TO220
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | TO-220F, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 157 ns | |
| Turn-on Time-Nom (ton) | 21 ns | |
| VCEsat-Max | 1.98 V |