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Memory / DRAMs / AS4C8M16SA-6TIN
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AS4C8M16SA-6TIN by:

Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for AS4C8M16SA-6TIN by Alliance Memory Inc

Overview of AS4C8M16SA-6TIN by Alliance Memory Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Price & Stock for AS4C8M16SA-6TIN

Part # Distributor Description Stock Price Buy
DISTI # 82AK3832
Newark Dram, 128Mbit, 166Mhz, Tsop-Ii-54, Dram Type:Sdram, Memory Configuration:8M X 16Bit, Clock Frequency Max:166Mhz, Ic Case/Package:Tsop-Ii, No. Of Pins:54Pins, Supply Voltage Nom:3.3V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C8M16SA-6TIN Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 108
  • 1 $5.1300
  • 100 $4.2000
  • 250 $3.8500
  • 500 $3.5700
  • 1,000 $3.3600
$3.3600 / $5.1300 Buy Now
DISTI # 55AC1229
Newark Aiaas4C8M16Sa-6Tin Rohs Compliant: Yes |Alliance Memory AS4C8M16SA-6TIN Min Qty: 108 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 1450-1267-ND
DigiKey IC DRAM 128MBIT PAR 54TSOP II Min Qty: 1 Lead time: 6 Weeks Container: Tray 6236
In Stock
  • 1 $4.2200
  • 10 $3.8320
  • 25 $3.7488
  • 40 $3.7285
  • 108 $3.3432
  • 324 $3.3309
  • 540 $3.2092
  • 972 $3.0510
$3.0510 / $4.2200 Buy Now
DISTI # AS4C8M16SA-6TIN
Avnet Americas DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA - Trays (Alt: AS4C8M16SA-6TIN) RoHS: Not Compliant Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks, 0 Days Container: Tray 182753 Factory Stock
  • 108 $3.5100
$3.5100 Buy Now
DISTI # 913-4C8M16SA-6TIN
Mouser Electronics DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Industrial temp - Tray 1378
  • 1 $4.1000
  • 10 $3.7200
  • 108 $3.1600
  • 540 $2.9600
  • 2,592 $2.9300
$2.9300 / $4.1000 Buy Now
Future Electronics AS4C4M16SA Series 128 Mb (8 M x 16) A-die 3.3V 166 MHz SDRAM - TSOP II-54 RoHS: Compliant pbFree: Yes Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks Container: Tray 535
Tray
  • 108 $3.1100
  • 648 $3.0600
  • 972 $3.0400
  • 1,620 $3.0000
  • 3,240 $2.9300
$2.9300 / $3.1100 Buy Now
Bristol Electronics   Min Qty: 2 13
  • 2 $4.4800
  • 7 $2.9120
$2.9120 / $4.4800 Buy Now
DISTI # AS4C8M16SA-6TIN
TME IC: DRAM memory, 128MbDRAM, 2Mx16bitx4, 3.3V, 166MHz, 5.4ns Min Qty: 1 46
  • 1 $4.2500
  • 5 $4.0500
  • 25 $3.4400
  • 108 $2.6900
$2.6900 / $4.2500 Buy Now
Karl Kruse GmbH & Co KG SDR 128Mb 8M x 16 3.3V 54pin TSOPII 166 Mhz industrial temp(.63) 193553
RFQ
DISTI # ICDRAM1727
Rutronik SDRAM 128Mb 8Mx16 166MHz TSOP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tray Stock DE - 36
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 108 $3.5700
  • 216 $2.9100
  • 324 $2.7800
  • 540 $2.7600
  • 648 $2.7000
$2.7000 / $3.5700 Buy Now
DISTI # AS4C8M16SA-6TIN
Avnet Asia DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks, 0 Days 0
RFQ
DISTI # AS4C8M16SA-6TIN
Avnet Silica DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 7 Weeks, 0 Days Silica - 0
Buy Now
New Advantage Corporation TSOP 54/I�/IC SDRAM 128MBIT 166MHZ RoHS: Compliant Min Qty: 1 Package Multiple: 1 83
  • 60 $4.1000
$4.1000 Buy Now

Part Details for AS4C8M16SA-6TIN

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AS4C8M16SA-6TIN Part Data Attributes

Parametric Data
AS4C8M16SA-6TIN Alliance Memory Inc
Buy Now Datasheet
Compare Parts:
AS4C8M16SA-6TIN Alliance Memory Inc Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 6 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Width 10.16 mm

Alternate Parts for AS4C8M16SA-6TIN

This table gives cross-reference parts and alternative options found for AS4C8M16SA-6TIN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C8M16SA-6TIN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C8M16S-6TCN Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TIN vs AS4C8M16S-6TCN
M12L128168A-6TVAG2N Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TIN vs M12L128168A-6TVAG2N
V54C32816G4VCT6 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation AS4C8M16SA-6TIN vs V54C32816G4VCT6
AS4C8M16S-6TCNTR Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TIN vs AS4C8M16S-6TCNTR
K4S281632I-TL600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632I-TL600
NT5SV8M16HS-6KI Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Nanya Technology Corporation AS4C8M16SA-6TIN vs NT5SV8M16HS-6KI
K4S281632F-UL600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632F-UL600
K4S281632D-TI60 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632D-TI60
K4S281632E-TC60 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632E-TC60
M12L128168A-6TG2S DRAM, Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TIN vs M12L128168A-6TG2S
Part Number Description Manufacturer Compare
V55C2128164VAT10I Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TIN vs V55C2128164VAT10I
VG36128401ATL-8H-P Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation AS4C8M16SA-6TIN vs VG36128401ATL-8H-P
KM44S32030BT-GH Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs KM44S32030BT-GH
V54C3128164VCUI75H Synchronous DRAM, 8MX16, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TIN vs V54C3128164VCUI75H
V54C3128404VCLI7E Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TIN vs V54C3128404VCLI7E
MT48LC8M16LFP-8:G Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Micron Technology Inc AS4C8M16SA-6TIN vs MT48LC8M16LFP-8:G
MT48LC8M16A2TG-7L Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc AS4C8M16SA-6TIN vs MT48LC8M16A2TG-7L
NT5SV8M16FS-6K Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 MM, HALOGEN FREE AND LEAD FREE, PLASTIC, TSSOP2-54 Nanya Technology Corporation AS4C8M16SA-6TIN vs NT5SV8M16FS-6K
V54C3128404VCT5E Synchronous DRAM, 32MX4, 4.5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TIN vs V54C3128404VCT5E
HY57V281620FLTP-6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc AS4C8M16SA-6TIN vs HY57V281620FLTP-6

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