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Transistors Power Bipolar Transistors BD682

BD682
Description: Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Overview of BD682 by Samsung Semiconductor

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Where used in Applications: Industrial Automation

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Part Data Attributes for BD682 by Samsung Semiconductor
Parametric Data

BD682
Samsung Semiconductor
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
ISOLATED
Collector Current-Max (IC)
4 A
Collector-Emitter Voltage-Max
100 V
Configuration
DARLINGTON
DC Current Gain-Min (hFE)
750
JEDEC-95 Code
TO-126
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
PNP
Power Dissipation Ambient-Max
40 W
Power Dissipation-Max (Abs)
40 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
10 MHz
VCEsat-Max
2.5 V
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  1. BD682
    Samsung Semiconductor
    Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
    VS

Alternate Parts for BD682

This table gives cross-reference parts and alternative options found for BD682. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD682, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BD682 Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Central Semiconductor Corp BD682 vs BD682
BD682T 4A, 100V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN onsemi BD682 vs BD682T
BD682 4A, 100V, PNP, Si, POWER TRANSISTOR, TO-225AA Motorola Mobility LLC BD682 vs BD682
BD682 Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Crimson Semiconductor Inc BD682 vs BD682
Part Number Description Manufacturer Compare
BDW54 4A, 45V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN JW Miller BD682 vs BDW54
TIP116TU 2A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC BD682 vs TIP116TU
TIP115 Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Fairchild Semiconductor Corporation BD682 vs TIP115
TIP125 PNP Epitaxial Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1200/BULK Fairchild Semiconductor Corporation BD682 vs TIP125
TIP107TU PNP Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL Fairchild Semiconductor Corporation BD682 vs TIP107TU
TIP127 Power Bipolar Transistor, 5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Samsung Semiconductor BD682 vs TIP127
TIP105 POWER TRANSISTOR, TO-220, TO-220, 3 PIN JW Miller BD682 vs TIP105
TIP137 8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220, PLASTIC, TO-220, 3 PIN JW Miller BD682 vs TIP137
MJE702 4A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA Motorola Mobility LLC BD682 vs MJE702
TIP117TU PNP Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL Fairchild Semiconductor Corporation BD682 vs TIP117TU

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