Part Details for BSC029N025SG by Infineon Technologies AG
Overview of BSC029N025SG by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC029N025SG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSC029N025SG-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 371 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
8868 In Stock |
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$0.8100 | Buy Now |
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | 40 |
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$1.4490 / $2.4150 | Buy Now | |
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Rochester Electronics | BSC029N025 - Power Field-Effect Transistor, 24A, 25V, 0.0045ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 8868 |
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$0.6942 / $0.8167 | Buy Now |
Part Details for BSC029N025SG
BSC029N025SG CAD Models
BSC029N025SG Part Data Attributes
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BSC029N025SG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC029N025SG
Infineon Technologies AG
Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 680 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC029N025SG
This table gives cross-reference parts and alternative options found for BSC029N025SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC029N025SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HAT2134H | 60A, 20V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | Renesas Electronics Corporation | BSC029N025SG vs HAT2134H |
| FDS7288N3 | Power Field-Effect Transistor, 20A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | BSC029N025SG vs FDS7288N3 |
| HAT2099H-EL-E | Nch Single Power Mosfet 30V 50A 3.7Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | BSC029N025SG vs HAT2099H-EL-E |
| HAT2165H-EL-E | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | BSC029N025SG vs HAT2165H-EL-E |
| FDS7088N3 | 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | Rochester Electronics LLC | BSC029N025SG vs FDS7088N3 |
| HAT2096H | Power Field-Effect Transistor, 40A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK-5 | Hitachi Ltd | BSC029N025SG vs HAT2096H |
| HAT2164H-EL-E | Nch Single Power Mosfet 30V 60A 3.1Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | BSC029N025SG vs HAT2164H-EL-E |
| FDMS7670 | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | BSC029N025SG vs FDMS7670 |
| BSC052N03S | Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC029N025SG vs BSC052N03S |
| BSC0908NS | Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC029N025SG vs BSC0908NS |