Datasheets
BSP372 by:

Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN

Part Details for BSP372 by Infineon Technologies AG

Overview of BSP372 by Infineon Technologies AG

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Price & Stock for BSP372

Part # Distributor Description Stock Price Buy
Sense Electronic Company Limited SOT-223 19300
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Part Details for BSP372

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BSP372 Part Data Attributes:

BSP372 Infineon Technologies AG
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BSP372 Infineon Technologies AG Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-223
Package Description ROHS COMPLIANT, SOT-223, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.7 A
Drain-source On Resistance-Max 0.31 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 6.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSP372

This table gives cross-reference parts and alternative options found for BSP372. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP372, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP372L6327 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP372 vs BSP372L6327
BSP372E6327 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG BSP372 vs BSP372E6327
Part Number Description Manufacturer Compare
IRFL4310 Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG BSP372 vs IRFL4310
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP372 vs BSP373NH6327
IRLM120ATF_NL Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP372 vs IRLM120ATF_NL
SIHFL110TR-GE3 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies BSP372 vs SIHFL110TR-GE3
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier BSP372 vs IRFL110TRPBF
IRFL4310TR Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier BSP372 vs IRFL4310TR
IRLM120A Power Field-Effect Transistor onsemi BSP372 vs IRLM120A
STN2NF10 N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package STMicroelectronics BSP372 vs STN2NF10
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies BSP372 vs IRFL110
PMV213SN,215 PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin Nexperia BSP372 vs PMV213SN,215

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