Datasheets
CSD16570Q5B by: Texas Instruments

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm 8-VSON-CLIP -55 to 150

Part Details for CSD16570Q5B by Texas Instruments

Overview of CSD16570Q5B by Texas Instruments

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Price & Stock for CSD16570Q5B

Part # Distributor Description Stock Price Buy
DISTI # 296-47753-1-ND
DigiKey MOSFET N-CH 25V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4590
In Stock
  • 1 $2.8600
  • 10 $1.8540
  • 100 $1.2779
  • 500 $1.0313
  • 1,000 $0.9519
  • 2,500 $0.8659
  • 5,000 $0.8636
$0.8636 / $2.8600 Buy Now
DISTI # 595-CSD16570Q5B
Mouser Electronics MOSFETs 25-V N-channel NexFET Pwr MOSFET RoHS: Compliant 2335
  • 1 $2.0600
  • 10 $1.7100
  • 100 $1.3700
  • 250 $1.3600
  • 500 $1.1600
  • 1,000 $0.9770
  • 2,500 $0.9110
  • 5,000 $0.8760
$0.8760 / $2.0600 Buy Now
Win Source Electronics MOSFET N-CH 25V 100A 8VSON 18700
  • 65 $0.8130
  • 150 $0.6670
  • 235 $0.6460
  • 320 $0.6250
  • 415 $0.6050
  • 555 $0.5420
$0.5420 / $0.8130 Buy Now

Part Details for CSD16570Q5B

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CSD16570Q5B Part Data Attributes

CSD16570Q5B Texas Instruments
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CSD16570Q5B Texas Instruments 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm 8-VSON-CLIP -55 to 150
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 480 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.00082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1290 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 195 W
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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