Part Details for F10S6N-4062 by Shindengen Electronic Manufacturing Co Ltd
Overview of F10S6N-4062 by Shindengen Electronic Manufacturing Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for F10S6N-4062
F10S6N-4062 CAD Models
F10S6N-4062 Part Data Attributes:
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F10S6N-4062
Shindengen Electronic Manufacturing Co Ltd
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Datasheet
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F10S6N-4062
Shindengen Electronic Manufacturing Co Ltd
Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | |
| Part Package Code | SFM | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for F10S6N-4062
This table gives cross-reference parts and alternative options found for F10S6N-4062. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of F10S6N-4062, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2282-4000 | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | F10S6N-4062 vs 2SK2282-4000 |
| 2SK2281-4071 | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Shindengen Electronic Manufacturing Co Ltd | F10S6N-4062 vs 2SK2281-4071 |
| 2SK2282-4072 | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | F10S6N-4062 vs 2SK2282-4072 |
| 2SK2281-4101 | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Shindengen Electronic Manufacturing Co Ltd | F10S6N-4062 vs 2SK2281-4101 |
| 2SK2281-4061 | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Shindengen Electronic Manufacturing Co Ltd | F10S6N-4062 vs 2SK2281-4061 |