Datasheets
FDS6690A-NBNP006 by:

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ, SO 8L NB, 2500-REEL

Part Details for FDS6690A-NBNP006 by onsemi

Overview of FDS6690A-NBNP006 by onsemi

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Price & Stock for FDS6690A-NBNP006

Part # Distributor Description Stock Price Buy
DISTI # 2832-FDS6690A-NBNP006TR-ND
DigiKey SINGLE N-CHANNEL, LOGIC LEVEL, P Min Qty: 2500 Lead time: 1 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT 6965
In Stock
  • 2,500 $0.2210
$0.2210 Buy Now
DISTI # FDS6690A-NBNP006
Avnet Americas Transistor MOSFET N-Channel 20V 11A 8-Pin SO T/R - Tape and Reel (Alt: FDS6690A-NBNP006) RoHS: Compliant Min Qty: 3125 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 6965 Partner Stock
  • 3,125 $0.2368
  • 3,200 $0.2304
  • 6,300 $0.2240
  • 16,000 $0.2176
  • 32,000 $0.2112
  • 160,000 $0.2048
  • 320,000 $0.1984
$0.1984 / $0.2368 Buy Now
Flip Electronics Stock, ship today 6965
  • 1 $0.1600
$0.1600 RFQ

Part Details for FDS6690A-NBNP006

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FDS6690A-NBNP006 Part Data Attributes:

FDS6690A-NBNP006 onsemi
Buy Now Datasheet
Compare Parts:
FDS6690A-NBNP006 onsemi Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ, SO 8L NB, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code SO 8L NB
Package Description SOP-8
Manufacturer Package Code 751EB
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 96 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 115 pF
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6690A-NBNP006

This table gives cross-reference parts and alternative options found for FDS6690A-NBNP006. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6690A-NBNP006, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6690A_NL Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDS6690A-NBNP006 vs FDS6690A_NL
FDS6690AL99Z Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDS6690A-NBNP006 vs FDS6690AL99Z
Part Number Description Manufacturer Compare
SI6966DQ-T1-E3 Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Vishay Siliconix FDS6690A-NBNP006 vs SI6966DQ-T1-E3
JANTX2N5545 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Temic Semiconductors FDS6690A-NBNP006 vs JANTX2N5545
FDS6912AL86Z Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6690A-NBNP006 vs FDS6912AL86Z
SI4416DY/T3 TRANSISTOR 9 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal NXP Semiconductors FDS6690A-NBNP006 vs SI4416DY/T3
SI4416DYS62Z Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6690A-NBNP006 vs SI4416DYS62Z
JANTXV2N5545 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc FDS6690A-NBNP006 vs JANTXV2N5545
2N5547 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc FDS6690A-NBNP006 vs 2N5547
FDC654PD87Z Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDS6690A-NBNP006 vs FDC654PD87Z
FDS6912A_NL Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6690A-NBNP006 vs FDS6912A_NL
FDS6930A Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 5.5A, 40mΩ, 2500-REEL onsemi FDS6690A-NBNP006 vs FDS6930A

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