Datasheets
FDS7088N3 by:

Power Field-Effect Transistor, 21A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8

Part Details for FDS7088N3 by Fairchild Semiconductor Corporation

Overview of FDS7088N3 by Fairchild Semiconductor Corporation

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Price & Stock for FDS7088N3

Part # Distributor Description Stock Price Buy
Quest Components 21 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET 18
  • 1 $5.0175
  • 3 $3.3450
  • 8 $2.5088
$2.5088 / $5.0175 Buy Now
Rochester Electronics FDS7088 - 21A, 30V, 0.004ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 4530
  • 1 $2.6300
  • 25 $2.5800
  • 100 $2.4700
  • 500 $2.3700
  • 1,000 $2.2300
$2.2300 / $2.6300 Buy Now
Sense Electronic Company Limited SO8 24285
RFQ

Part Details for FDS7088N3

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FDS7088N3 Part Data Attributes

FDS7088N3 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDS7088N3 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 21A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description FLMP, SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS7088N3

This table gives cross-reference parts and alternative options found for FDS7088N3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS7088N3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS7088N3 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 Rochester Electronics LLC FDS7088N3 vs FDS7088N3
Part Number Description Manufacturer Compare
HAT2134H 60A, 20V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 Renesas Electronics Corporation FDS7088N3 vs HAT2134H
FDS7288N3 Power Field-Effect Transistor, 20A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 Fairchild Semiconductor Corporation FDS7088N3 vs FDS7288N3
HAT2099H-EL-E Nch Single Power Mosfet 30V 50A 3.7Mohm Lfpak, LFPAK, /Embossed Tape Renesas Electronics Corporation FDS7088N3 vs HAT2099H-EL-E
HAT2165H-EL-E Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak, LFPAK, /Embossed Tape Renesas Electronics Corporation FDS7088N3 vs HAT2165H-EL-E
FDS7088N3 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 Rochester Electronics LLC FDS7088N3 vs FDS7088N3
HAT2096H Power Field-Effect Transistor, 40A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK-5 Hitachi Ltd FDS7088N3 vs HAT2096H
HAT2164H-EL-E Nch Single Power Mosfet 30V 60A 3.1Mohm Lfpak, LFPAK, /Embossed Tape Renesas Electronics Corporation FDS7088N3 vs HAT2164H-EL-E
FDMS7670 Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN Fairchild Semiconductor Corporation FDS7088N3 vs FDMS7670
BSC052N03S Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8 Infineon Technologies AG FDS7088N3 vs BSC052N03S
BSC0908NS Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG FDS7088N3 vs BSC0908NS

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