Datasheets
FMC20N50E by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN

Part Details for FMC20N50E by Fuji Electric Co Ltd

Overview of FMC20N50E by Fuji Electric Co Ltd

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Part Details for FMC20N50E

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FMC20N50E Part Data Attributes

FMC20N50E Fuji Electric Co Ltd
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FMC20N50E Fuji Electric Co Ltd Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN
Part Life Cycle Code Not Recommended
Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Avalanche Energy Rating (Eas) 582.5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.31 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FMC20N50E

This table gives cross-reference parts and alternative options found for FMC20N50E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMC20N50E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FMC20N50ES Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN Fuji Electric Co Ltd FMC20N50E vs FMC20N50ES
IXFP20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IXYS Corporation FMC20N50E vs IXFP20N50P3
IXFH20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN IXYS Corporation FMC20N50E vs IXFH20N50P3
IXFQ20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation FMC20N50E vs IXFQ20N50P3
IXFA20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN IXYS Corporation FMC20N50E vs IXFA20N50P3
IXFQ20N50P3 Power Field-Effect Transistor, Littelfuse Inc FMC20N50E vs IXFQ20N50P3

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