Datasheets
FQD5N50CTM by:

Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Part Details for FQD5N50CTM by Fairchild Semiconductor Corporation

Overview of FQD5N50CTM by Fairchild Semiconductor Corporation

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Price & Stock for FQD5N50CTM

Part # Distributor Description Stock Price Buy
Bristol Electronics   240
RFQ
Quest Components   192
  • 1 $1.2740
  • 21 $0.7644
  • 79 $0.6370
$0.6370 / $1.2740 Buy Now
Rochester Electronics 4A, 500V, 1.4ohm, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 8576
  • 1 $0.5574
  • 25 $0.5463
  • 100 $0.5240
  • 500 $0.5017
  • 1,000 $0.4738
$0.4738 / $0.5574 Buy Now
ComSIT USA QFET 500 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant Europe - 10000
RFQ

Part Details for FQD5N50CTM

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FQD5N50CTM Part Data Attributes:

FQD5N50CTM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQD5N50CTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description LEAD FREE, DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD5N50CTM

This table gives cross-reference parts and alternative options found for FQD5N50CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD5N50CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD5N50CTM_WS 500V N-Channel Advance QFET® C-Series, TO-252 3L (DPAK), 30000-TAPE REEL onsemi FQD5N50CTM vs FQD5N50CTM_WS
FQD5N50C Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation FQD5N50CTM vs FQD5N50C
Part Number Description Manufacturer Compare
FDD5N50NZTM Power MOSFET, N-Channel, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK, 2500-REEL onsemi FQD5N50CTM vs FDD5N50NZTM
FQD5N50C Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation FQD5N50CTM vs FQD5N50C
FQD5N50CTM_WS 500V N-Channel Advance QFET® C-Series, TO-252 3L (DPAK), 30000-TAPE REEL onsemi FQD5N50CTM vs FQD5N50CTM_WS

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