Part Details for FQU2N90TU by Rochester Electronics LLC
Overview of FQU2N90TU by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQU2N90TU
FQU2N90TU CAD Models
FQU2N90TU Part Data Attributes
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FQU2N90TU
Rochester Electronics LLC
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Datasheet
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FQU2N90TU
Rochester Electronics LLC
1.7A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-251 | |
| Package Description | IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 7.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6.8 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQU2N90TU
This table gives cross-reference parts and alternative options found for FQU2N90TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU2N90TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQU2N90 | Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU2N90TU vs FQU2N90 |
| FQU2N90TU-WS | Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE | onsemi | FQU2N90TU vs FQU2N90TU-WS |
| FQU2N90TU_AM002 | N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω, TO-251 3L (IPAK), 30240-RAIL | onsemi | FQU2N90TU vs FQU2N90TU_AM002 |
| FQU2N90TU | Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU2N90TU vs FQU2N90TU |
| FQU2N90TU_WS | N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω, TO-251 3L (IPAK), 30240-RAIL | onsemi | FQU2N90TU vs FQU2N90TU_WS |
| FQU2N90TU-AM002 | Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE | onsemi | FQU2N90TU vs FQU2N90TU-AM002 |