Datasheets
FS22SM-10 by:

22A, 500V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN

Part Details for FS22SM-10 by Renesas Electronics Corporation

Overview of FS22SM-10 by Renesas Electronics Corporation

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Part Details for FS22SM-10

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FS22SM-10 Part Data Attributes:

FS22SM-10 Renesas Electronics Corporation
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FS22SM-10 Renesas Electronics Corporation 22A, 500V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code TO-3P
Package Description TO-3P, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1996-07-01
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.29 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 66 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FS22SM-10

This table gives cross-reference parts and alternative options found for FS22SM-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS22SM-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FS22SM-10 Power Field-Effect Transistor, 22A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric FS22SM-10 vs FS22SM-10
Part Number Description Manufacturer Compare
HUF75345P3 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ, 800-TUBE onsemi FS22SM-10 vs HUF75345P3
HUF75339P3 75A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation FS22SM-10 vs HUF75339P3
FS22SM-10 Power Field-Effect Transistor, 22A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric FS22SM-10 vs FS22SM-10
MTP75N06HD 75A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi FS22SM-10 vs MTP75N06HD
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier FS22SM-10 vs IRF3205VPBF
MTP75N05HD 75A, 50V, 0.0095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi FS22SM-10 vs MTP75N05HD
HUF75339P3 Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor FS22SM-10 vs HUF75339P3
AUIRF3205 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG FS22SM-10 vs AUIRF3205
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier FS22SM-10 vs IRF3205
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier FS22SM-10 vs IRF3205ZPBF

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