Part Details for GT15H101 by Toshiba America Electronic Components
Overview of GT15H101 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for GT15H101
GT15H101 CAD Models
GT15H101 Part Data Attributes
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GT15H101
Toshiba America Electronic Components
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Datasheet
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GT15H101
Toshiba America Electronic Components
TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED SWITCHING | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 15 A | |
| Collector-Emitter Voltage-Max | 500 V | |
| Configuration | SINGLE | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 600 ns | |
| Turn-on Time-Nom (ton) | 400 ns |
Alternate Parts for GT15H101
This table gives cross-reference parts and alternative options found for GT15H101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT15H101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | GT15H101 vs SGP13N60UF |
| HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | GT15H101 vs HGT1S12N60B3S9A |
| SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | GT15H101 vs SGP5N60RUFD |
| IXGH38N60 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | GT15H101 vs IXGH38N60 |
| HGTP1N120CN | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | GT15H101 vs HGTP1N120CN |
| IXGH50N60B4 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | GT15H101 vs IXGH50N60B4 |
| IRG4BC20FD-SPBF | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | GT15H101 vs IRG4BC20FD-SPBF |
| HGT1S3N60C3DS | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Harris Semiconductor | GT15H101 vs HGT1S3N60C3DS |
| IRG4PC30UD | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | GT15H101 vs IRG4PC30UD |
| HGTG30N60B3 | IGBT, 600V, PT, 450-TUBE | onsemi | GT15H101 vs HGTG30N60B3 |