Part Details for HGT1S3N60C3D by Harris Semiconductor
Overview of HGT1S3N60C3D by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for HGT1S3N60C3D
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGT1S3N60C3D-ND
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DigiKey | 6A, 600V, N-CHANNEL IGBT Min Qty: 365 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
365 In Stock |
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$0.9000 | Buy Now |
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Rochester Electronics | 6A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 365 |
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$0.7735 / $0.9100 | Buy Now |
Part Details for HGT1S3N60C3D
HGT1S3N60C3D CAD Models
HGT1S3N60C3D Part Data Attributes:
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HGT1S3N60C3D
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
HGT1S3N60C3D
Harris Semiconductor
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, HYPER FAST RECOVERY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 6 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 275 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 33 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 325 ns | |
Turn-on Time-Nom (ton) | 5 ns |
Alternate Parts for HGT1S3N60C3D
This table gives cross-reference parts and alternative options found for HGT1S3N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S3N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | HGT1S3N60C3D vs SGP5N60RUFD |
GT25Q101 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGT1S3N60C3D vs GT25Q101 |
HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | HGT1S3N60C3D vs HGT1S12N60B3S9A |
HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | HGT1S3N60C3D vs HGTP20N60C3R |
IRG4BC20FD-STRL | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | HGT1S3N60C3D vs IRG4BC20FD-STRL |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | HGT1S3N60C3D vs IXGH36N60A3D4 |
IRGPS40B120U | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | Infineon Technologies AG | HGT1S3N60C3D vs IRGPS40B120U |
SGP5N60RUF | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | HGT1S3N60C3D vs SGP5N60RUF |
IRG4PC40UD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGT1S3N60C3D vs IRG4PC40UD |
IXSH10N120A | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGT1S3N60C3D vs IXSH10N120A |