Datasheets
HGTP12N60C3DR by:

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Part Details for HGTP12N60C3DR by Fairchild Semiconductor Corporation

Overview of HGTP12N60C3DR by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for HGTP12N60C3DR

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HGTP12N60C3DR Part Data Attributes

HGTP12N60C3DR Fairchild Semiconductor Corporation
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HGTP12N60C3DR Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 48 ns

Alternate Parts for HGTP12N60C3DR

This table gives cross-reference parts and alternative options found for HGTP12N60C3DR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP12N60C3DR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP12N60C3DR 24A, 600V, N-CHANNEL IGBT Intersil Corporation HGTP12N60C3DR vs HGTP12N60C3DR
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGTP12N60C3DR vs SGP13N60UF
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGTP12N60C3DR vs HGT1S12N60B3S9A
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor HGTP12N60C3DR vs SGP5N60RUFD
IXGH38N60 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTP12N60C3DR vs IXGH38N60
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTP12N60C3DR vs HGTP1N120CN
IXGH50N60B4 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN IXYS Corporation HGTP12N60C3DR vs IXGH50N60B4
IRG4BC20FD-SPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGTP12N60C3DR vs IRG4BC20FD-SPBF
HGT1S3N60C3DS Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Harris Semiconductor HGTP12N60C3DR vs HGT1S3N60C3DS
IRG4PC30UD Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG HGTP12N60C3DR vs IRG4PC30UD
HGTG30N60B3 IGBT, 600V, PT, 450-TUBE onsemi HGTP12N60C3DR vs HGTG30N60B3

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