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Power Field-Effect Transistor, 10A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPA65R125C7XKSA1-ND
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DigiKey | MOSFET N-CH 650V 10A TO220-FP Min Qty: 1 Lead time: 17 Weeks Container: Tube |
342 In Stock |
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$2.2703 / $4.6600 | Buy Now |
DISTI #
IPA65R125C7XKSA1
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Avnet Americas | Trans MOSFET N-CH 700V 10A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA65R125C7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$2.7009 | Buy Now |
DISTI #
726-IPA65R125C7XKSA1
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Mouser Electronics | MOSFET HIGH POWER BEST IN CLASS RoHS: Compliant | 199 |
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$2.2700 / $4.6600 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$2.3700 / $2.5900 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$2.3700 / $2.5900 | Buy Now |
DISTI #
IPA65R125C7XKSA1
|
Avnet Americas | Trans MOSFET N-CH 700V 10A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA65R125C7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$2.7009 | Buy Now |
DISTI #
IPA65R125C7XKSA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 1A, 32W, TO220FP Min Qty: 1 | 0 |
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$3.2600 / $5.4300 | RFQ |
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Ameya Holding Limited | MOSFET N-CH 650V TO220-3 | 99 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 15 | 405 |
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$5.6707 / $5.9690 | Buy Now |
DISTI #
SP001080136
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EBV Elektronik | Trans MOSFET N-CH 700V 10A 3-Pin TO-220 FP Tube (Alt: SP001080136) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 2 Weeks, 4 Days | EBV - 0 |
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Buy Now |
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IPA65R125C7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA65R125C7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 89 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 75 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPA65R125C7XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPA65R125C7XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPA60R120C7 | Power Field-Effect Transistor, 11A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | Infineon Technologies AG | IPA65R125C7XKSA1 vs IPA60R120C7 |
IPA65R125C7 | Power Field-Effect Transistor, 10A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | IPA65R125C7XKSA1 vs IPA65R125C7 |