Part Details for IPB65R150CFDATMA2 by Infineon Technologies AG
Overview of IPB65R150CFDATMA2 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB65R150CFDATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AJ1834
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Newark | Mosfet, N-Ch, 650V, 22.4A, To-263 Rohs Compliant: Yes |Infineon IPB65R150CFDATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1000 |
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$2.1800 / $4.2300 | Buy Now |
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DISTI #
448-IPB65R150CFDATMA2CT-ND
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DigiKey | MOSFET N-CH 650V 22.4A TO263-3 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1342 In Stock |
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$1.9033 / $4.0800 | Buy Now |
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DISTI #
IPB65R150CFDATMA2
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Avnet Americas | Trans MOSFET N-CH 650V 22.4A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R150CFDATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$2.3600 | Buy Now |
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DISTI #
726-IPB65R150CFDATM2
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Mouser Electronics | MOSFET HIGH POWER_LEGACY RoHS: Compliant | 0 |
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$1.9800 / $4.0800 | Order Now |
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Future Electronics | Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks Container: Reel | 99000Reel |
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$1.9500 / $2.0000 | Buy Now |
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Future Electronics | Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$1.9500 / $2.0000 | Buy Now |
Part Details for IPB65R150CFDATMA2
IPB65R150CFDATMA2 CAD Models
IPB65R150CFDATMA2 Part Data Attributes:
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IPB65R150CFDATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB65R150CFDATMA2
Infineon Technologies AG
Power Field-Effect Transistor, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 614 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 22.4 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB65R150CFDATMA2
This table gives cross-reference parts and alternative options found for IPB65R150CFDATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R150CFDATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB65R150CFDATMA1 | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB65R150CFDATMA2 vs IPB65R150CFDATMA1 |
| IPB65R150CFD | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB65R150CFDATMA2 vs IPB65R150CFD |
| IPB65R150CFDA | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPB65R150CFDATMA2 vs IPB65R150CFDA |