Datasheets
IPI051N15N5 by: Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3

Part Details for IPI051N15N5 by Infineon Technologies AG

Overview of IPI051N15N5 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IPI051N15N5

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IPI051N15N5 Part Data Attributes:

IPI051N15N5 Infineon Technologies AG
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IPI051N15N5 Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-262, I2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPI051N15N5

This table gives cross-reference parts and alternative options found for IPI051N15N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI051N15N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB048N15N5 Power Field-Effect Transistor, 120A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Infineon Technologies AG IPI051N15N5 vs IPB048N15N5
IPB048N15N5LF Power Field-Effect Transistor, Infineon Technologies AG IPI051N15N5 vs IPB048N15N5LF
IPP051N15N5 Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IPI051N15N5 vs IPP051N15N5

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