Datasheets
IPP60R170CFD7XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IPP60R170CFD7XKSA1 by Infineon Technologies AG

Overview of IPP60R170CFD7XKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPP60R170CFD7XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 43AC9327
Newark Mosfet, N-Ch, 600V, 14A, 150Deg C, 75W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IPP60R170CFD7XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 2903
  • 1 $3.4000
  • 10 $3.1800
  • 25 $2.9600
  • 50 $2.7500
  • 100 $2.3900
  • 250 $2.2800
  • 500 $2.1600
$2.1600 / $3.4000 Buy Now
DISTI # IPP60R170CFD7XKSA1-ND
DigiKey MOSFET N-CH 650V 14A TO220-3 Min Qty: 1 Lead time: 20 Weeks Container: Tube 254
In Stock
  • 1 $3.0100
  • 50 $2.3850
  • 100 $2.0443
  • 500 $1.8172
  • 1,000 $1.5560
  • 2,000 $1.4651
  • 5,000 $1.4056
$1.4056 / $3.0100 Buy Now
DISTI # IPP60R170CFD7XKSA1
Avnet Americas Transistor MOSFET N-CH 600V 14A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R170CFD7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 500 $1.7430
$1.7430 Buy Now
DISTI # 43AC9327
Avnet Americas Transistor MOSFET N-CH 600V 14A 3-Pin TO-220 Tube - Bulk (Alt: 43AC9327) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 201 Partner Stock
  • 1 $3.4000
  • 10 $3.1800
  • 25 $2.9600
  • 50 $2.7500
  • 100 $2.3900
$2.3900 / $3.4000 Buy Now
DISTI # 726-IPP60R170CFD7XKS
Mouser Electronics MOSFET HIGH POWER_NEW RoHS: Compliant 328
  • 1 $3.0000
  • 10 $2.5200
  • 25 $2.3800
  • 100 $2.0400
  • 250 $1.9300
  • 500 $1.8100
  • 1,000 $1.5500
  • 2,500 $1.4600
  • 5,000 $1.4000
$1.4000 / $3.0000 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks Container: Tube 0
Tube
  • 50 $1.5900
  • 200 $1.5400
  • 500 $1.5100
  • 1,250 $1.4800
  • 2,000 $1.4400
$1.4400 / $1.5900 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks Container: Tube 0
Tube
  • 50 $1.5900
  • 200 $1.5400
  • 500 $1.5100
  • 1,250 $1.4800
  • 2,000 $1.4400
$1.4400 / $1.5900 Buy Now
Ameya Holding Limited   Min Qty: 5 520
  • 5 $3.8747
  • 15 $3.7582
  • 25 $3.6456
$3.6456 / $3.8747 Buy Now
Ameya Holding Limited HIGH POWER_NEW 164
RFQ
DISTI # SP001617974
EBV Elektronik Transistor MOSFET N-CH 600V 14A 3-Pin TO-220 Tube (Alt: SP001617974) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPP60R170CFD7XKSA1

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IPP60R170CFD7XKSA1 Part Data Attributes

IPP60R170CFD7XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPP60R170CFD7XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 51 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP60R170CFD7XKSA1

This table gives cross-reference parts and alternative options found for IPP60R170CFD7XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R170CFD7XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB60R180C7ATMA1 Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Infineon Technologies AG IPP60R170CFD7XKSA1 vs IPB60R180C7ATMA1
IPD60R170CFD7ATMA1 Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Infineon Technologies AG IPP60R170CFD7XKSA1 vs IPD60R170CFD7ATMA1
IPP60R180C7 Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IPP60R170CFD7XKSA1 vs IPP60R180C7
IPW60R180C7 Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Infineon Technologies AG IPP60R170CFD7XKSA1 vs IPW60R180C7

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