Part Details for IPP60R299CP by Infineon Technologies AG
Overview of IPP60R299CP by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP60R299CP
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPP60R299CP
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Mouser Electronics | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP RoHS: Compliant | 0 |
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$1.3700 / $2.9500 | Order Now |
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Bristol Electronics | 1139 |
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RFQ | ||
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Quest Components | 25 |
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$2.8776 / $4.3164 | Buy Now | |
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ComSIT USA | COOLMOS POWER TRANSISTOR Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 100 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 650V 11A TO-220 | 8500 |
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RFQ | |
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Perfect Parts Corporation | 1151 |
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RFQ |
Part Details for IPP60R299CP
IPP60R299CP CAD Models
IPP60R299CP Part Data Attributes:
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IPP60R299CP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP60R299CP
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.299 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPP60R299CP
This table gives cross-reference parts and alternative options found for IPP60R299CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R299CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FCP11N60N-F102 | Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, TO-220 3L, 800-TUBE | onsemi | IPP60R299CP vs FCP11N60N-F102 |
IPW60R299CPFKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPP60R299CP vs IPW60R299CPFKSA1 |
FCP11N60N | Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, 800-TUBE | onsemi | IPP60R299CP vs FCP11N60N |
IPW60R299CPXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPP60R299CP vs IPW60R299CPXK |
STU16N65M5 | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | IPP60R299CP vs STU16N65M5 |
STP16N65M5 | N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220 package | STMicroelectronics | IPP60R299CP vs STP16N65M5 |
STI16N65M5 | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | IPP60R299CP vs STI16N65M5 |
IPW65R310CFD | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPP60R299CP vs IPW65R310CFD |
IPW65R310CFDFKSA1 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPP60R299CP vs IPW65R310CFDFKSA1 |
STW16N65M5 | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | IPP60R299CP vs STW16N65M5 |