There are no models available for this part yet.
Overview of IRF1310NSTRL by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 7 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 8 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRF1310NSTRL by International Rectifier
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant |
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RFQ |
CAD Models for IRF1310NSTRL by International Rectifier
Part Data Attributes for IRF1310NSTRL by International Rectifier
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|---|---|
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Pbfree Code
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No
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Rohs Code
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No
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Part Package Code
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D2PAK
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Package Description
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PLASTIC, D2PAK-3
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Pin Count
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3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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AVALANCHE RATED, HIGH RELIABILITY
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Avalanche Energy Rating (Eas)
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420 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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42 A
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Drain-source On Resistance-Max
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0.036 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e0
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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225
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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120 W
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Power Dissipation-Max (Abs)
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160 W
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Pulsed Drain Current-Max (IDM)
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140 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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TIN LEAD
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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30
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRF1310NSTRL
This table gives cross-reference parts and alternative options found for IRF1310NSTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1310NSTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF1310NSPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1310NSTRL vs IRF1310NSPBF |
| IRF1310NS | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1310NSTRL vs IRF1310NS |
| IRF1310NSTRLPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1310NSTRL vs IRF1310NSTRLPBF |
| IRF1310NSTRR | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF1310NSTRL vs IRF1310NSTRR |
| IRF1310NSTRRPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1310NSTRL vs IRF1310NSTRRPBF |
| IRF1310NSTRRPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1310NSTRL vs IRF1310NSTRRPBF |
| IRF1310NSPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1310NSTRL vs IRF1310NSPBF |