Datasheets
IRF640N by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF640N by International Rectifier

Overview of IRF640N by International Rectifier

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Price & Stock for IRF640N

Part # Distributor Description Stock Price Buy
Bristol Electronics   40
RFQ
Bristol Electronics   30
RFQ
Bristol Electronics   Min Qty: 5 10
  • 5 $1.1250
$1.1250 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 75
  • 1 $1.6000
  • 17 $0.9600
  • 64 $0.8000
$0.8000 / $1.6000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 24
  • 1 $3.3200
  • 3 $2.4900
  • 11 $2.0750
$2.0750 / $3.3200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 11
  • 1 $4.1190
  • 3 $3.4325
  • 8 $3.0206
$3.0206 / $4.1190 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 8
  • 1 $1.5000
  • 4 $1.2000
$1.2000 / $1.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 3
  • 1 $0.9600
$0.9600 Buy Now
Win Source Electronics Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) 388600
  • 240 $0.2108
  • 510 $0.1972
  • 790 $0.1904
  • 1,135 $0.1768
  • 1,475 $0.1700
  • 1,840 $0.1632
$0.1632 / $0.2108 Buy Now

Part Details for IRF640N

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IRF640N Part Data Attributes

IRF640N International Rectifier
Buy Now Datasheet
Compare Parts:
IRF640N International Rectifier Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 247 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF640N

This table gives cross-reference parts and alternative options found for IRF640N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF640NPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF640N vs IRF640NPBF
YTA640 TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components IRF640N vs YTA640
YTF640 TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components IRF640N vs YTF640
IRF640N Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF640N vs IRF640N
IRF640N Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF640N vs IRF640N
IRF640NPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF640N vs IRF640NPBF
Part Number Description Manufacturer Compare
IRF640N Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF640N vs IRF640N
IRF640N Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF640N vs IRF640N
IRF640-001 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF640N vs IRF640-001
IRF640 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF640N vs IRF640
2SK1350 TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRF640N vs 2SK1350
YTA640 TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components IRF640N vs YTA640
IRF640-006 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF640N vs IRF640-006
IRF640-009 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF640N vs IRF640-009
IRF640 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF640N vs IRF640
YTF640 TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components IRF640N vs YTF640

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