Part Details for IRF8327STRPBF by International Rectifier
Overview of IRF8327STRPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF8327STRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF8327STRPBF-ND
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DigiKey | MOSFET N-CH 30V 14A/60A DIRECTFT Min Qty: 467 Container: Bulk MARKETPLACE PRODUCT |
4538 In Stock |
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$0.6400 | Buy Now |
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Rochester Electronics | IRF8327 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 4538 |
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$0.5520 / $0.6494 | Buy Now |
Part Details for IRF8327STRPBF
IRF8327STRPBF CAD Models
IRF8327STRPBF Part Data Attributes:
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IRF8327STRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF8327STRPBF
International Rectifier
Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 62 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.0073 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF8327STRPBF
This table gives cross-reference parts and alternative options found for IRF8327STRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8327STRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF8327STR1PBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF8327STRPBF vs IRF8327STR1PBF |
IRF8327SPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF8327STRPBF vs IRF8327SPBF |
IRF8327STRPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF8327STRPBF vs IRF8327STRPBF |
IRF8327SPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF8327STRPBF vs IRF8327SPBF |