Part Details for IRF9335TRPBF by Infineon Technologies AG
Overview of IRF9335TRPBF by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF9335TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79R7561
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Newark | P Channel, Mosfet, -30V, -5.4A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Infineon IRF9335TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1579 |
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$0.7180 | Buy Now |
DISTI #
86AK5396
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Newark | Mosfet, P-Ch, 30V, 5.4A, Soic Rohs Compliant: Yes |Infineon IRF9335TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.3090 | Buy Now |
DISTI #
IRF9335TRPBFCT-ND
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DigiKey | MOSFET P-CH 30V 5.4A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
643 In Stock |
|
$0.2587 / $0.7800 | Buy Now |
DISTI #
IRF9335TRPBF
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Avnet Americas | Trans MOSFET P-CH 30V 5.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: IRF9335TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 4000 |
|
$0.2415 / $0.2760 | Buy Now |
DISTI #
942-IRF9335TRPBF
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Mouser Electronics | MOSFET 1 P-CH -30V HEXFET 59mOhms 4.7nC RoHS: Compliant | 2789 |
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$0.2580 / $0.6900 | Buy Now |
DISTI #
70019298
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RS | MOSFET, P-CHANNEL, -30V, 5.4A, 59 MOHM, SO-8 | Infineon IRF9335TRPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$0.6400 / $0.8000 | RFQ |
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Future Electronics | Single P-Channel 30 V 59 mOhm 9.1 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.2550 / $0.2700 | Buy Now |
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Future Electronics | Single P-Channel 30 V 59 mOhm 9.1 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.2550 / $0.2700 | Buy Now |
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Rochester Electronics | IRF9335 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 255914 |
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$0.2566 / $0.3019 | Buy Now |
DISTI #
IRF9335TRPBF
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TME | Transistor: P-MOSFET, unipolar, -30V, -5.4A, 2.5W, SO8 Min Qty: 4000 | 0 |
|
$0.2670 | RFQ |
Part Details for IRF9335TRPBF
IRF9335TRPBF CAD Models
IRF9335TRPBF Part Data Attributes:
|
IRF9335TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9335TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.4A I(D), 30V, 0.059ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 98 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.4 A | |
Drain-source On Resistance-Max | 0.059 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 43 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |