Part Details for IRFH8324TR2PBF by International Rectifier
Overview of IRFH8324TR2PBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFH8324TR2PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 335 |
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RFQ | ||
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Quest Components | 268 |
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$0.5803 / $1.1605 | Buy Now | |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 400 |
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RFQ |
Part Details for IRFH8324TR2PBF
IRFH8324TR2PBF CAD Models
IRFH8324TR2PBF Part Data Attributes
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IRFH8324TR2PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFH8324TR2PBF
International Rectifier
Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | QFN | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 94 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.0041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 54 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFH8324TR2PBF
This table gives cross-reference parts and alternative options found for IRFH8324TR2PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH8324TR2PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFH8324TRPBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | Infineon Technologies AG | IRFH8324TR2PBF vs IRFH8324TRPBF |
IRFH8324PBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | IRFH8324TR2PBF vs IRFH8324PBF |
IRFH8324PBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | Infineon Technologies AG | IRFH8324TR2PBF vs IRFH8324PBF |