Datasheets
IRFR224BTM by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRFR224BTM by Fairchild Semiconductor Corporation

Overview of IRFR224BTM by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFR224BTM

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IRFR224BTM Part Data Attributes

IRFR224BTM Fairchild Semiconductor Corporation
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IRFR224BTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 3.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)

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