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Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2283
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Newark | Mosfet Transistor, N Channel, 3.1 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFR320TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 112 |
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$0.7600 / $1.2800 | Buy Now |
DISTI #
79AH3181
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Newark | Mosfet N-Channel 400V Rohs Compliant: No |Vishay IRFR320TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9830 | Buy Now |
DISTI #
IRFR320TRPBF
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Avnet Americas | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR320TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4238 / $0.5383 | Buy Now |
DISTI #
97W2283
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Avnet Americas | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: 97W2283) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk | 112 Partner Stock |
|
$0.8180 / $1.2800 | Buy Now |
DISTI #
844-IRFR320TRPBF
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Mouser Electronics | MOSFET 400V N-CH HEXFET D-PAK RoHS: Compliant | 18964 |
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$0.6750 / $1.0800 | Buy Now |
DISTI #
E02:0323_00194160
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Arrow Electronics | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Date Code: 2416 | Europe - 20000 |
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$0.3950 | Buy Now |
DISTI #
V72:2272_07435359
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Arrow Electronics | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2242 Container: Cut Strips | Americas - 1802 |
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$0.4633 / $1.0572 | Buy Now |
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Future Electronics | Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 8000Reel |
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$0.4550 / $0.4900 | Buy Now |
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Future Electronics | Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 8000Reel |
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$0.4550 / $0.4900 | Buy Now |
DISTI #
80575986
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Verical | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2416 | Americas - 26000 |
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$0.3954 | Buy Now |
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IRFR320TRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR320TRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 5 Days | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 1.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR320TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR320TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR320TRRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR320TRPBF vs IRFR320TRRPBF |
IRFR320 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR320TRPBF vs IRFR320 |
IRFR320 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Fairchild Semiconductor Corporation | IRFR320TRPBF vs IRFR320 |
IRFR320TRRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR320TRPBF vs IRFR320TRRPBF |
IRFR320PBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR320TRPBF vs IRFR320PBF |
IRFR320TRRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR320TRPBF vs IRFR320TRRPBF |
IRFR320TRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR320TRPBF vs IRFR320TRPBF |
IRFR320 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR320TRPBF vs IRFR320 |
SIHFR320TR-GE3 | TRANSISTOR 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR320TRPBF vs SIHFR320TR-GE3 |
IRFR320TRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR320TRPBF vs IRFR320TRPBF |