Part Details for IRFZ20 by International Rectifier
Overview of IRFZ20 by International Rectifier
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFZ20
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8 |
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RFQ | ||
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Bristol Electronics | Min Qty: 4 | 1035 |
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$0.5775 / $1.6500 | Buy Now |
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Bristol Electronics | 142 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 2 |
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$1.7000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 828 |
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$0.7150 / $2.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 113 |
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$1.3600 / $2.7200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 71 |
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$1.4960 / $2.7200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 86 |
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$1.4960 / $2.7200 | Buy Now |
Part Details for IRFZ20
IRFZ20 CAD Models
IRFZ20 Part Data Attributes:
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IRFZ20
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFZ20
International Rectifier
Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ20
This table gives cross-reference parts and alternative options found for IRFZ20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IRFZ20 vs BUZ71 |
| MTP15N06V | 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFZ20 vs MTP15N06V |
| BTS114 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | IRFZ20 vs BTS114 |
| BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRFZ20 vs BUZ71 |
| IRFZ20 | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFZ20 vs IRFZ20 |
| IRFZ24 | 17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IRFZ20 vs IRFZ24 |
| IRFZ24 | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFZ20 vs IRFZ24 |
| IRFZ24 | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFZ20 vs IRFZ24 |