Datasheets
IRFZ34VSTRLPBF by: International Rectifier

Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRFZ34VSTRLPBF by International Rectifier

Overview of IRFZ34VSTRLPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFZ34VSTRLPBF

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IRFZ34VSTRLPBF Part Data Attributes:

IRFZ34VSTRLPBF International Rectifier
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IRFZ34VSTRLPBF International Rectifier Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 81 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ34VSTRLPBF

This table gives cross-reference parts and alternative options found for IRFZ34VSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34VSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ34VSTRRPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ34VSTRLPBF vs IRFZ34VSTRRPBF
IRFZ34VS Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFZ34VSTRLPBF vs IRFZ34VS
IRFZ34VSTRL Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ34VSTRLPBF vs IRFZ34VSTRL
IRFZ34VSTRR Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFZ34VSTRLPBF vs IRFZ34VSTRR
IRFZ34VSTRRPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFZ34VSTRLPBF vs IRFZ34VSTRRPBF
IRFZ34VSTRR Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ34VSTRLPBF vs IRFZ34VSTRR
IRFZ34VSPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFZ34VSTRLPBF vs IRFZ34VSPBF
Part Number Description Manufacturer Compare
IRF1010NSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFZ34VSTRLPBF vs IRF1010NSPBF
IRLZ44ZSTRLPBF Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ34VSTRLPBF vs IRLZ44ZSTRLPBF
AUIRFZ44VZSTRR Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLAINT, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ34VSTRLPBF vs AUIRFZ44VZSTRR
RFD15N06LESM9A 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ34VSTRLPBF vs RFD15N06LESM9A
BUK752R7-30B 75A, 30V, 0.0027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors IRFZ34VSTRLPBF vs BUK752R7-30B
RFD16N02LSM9A 16A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ34VSTRLPBF vs RFD16N02LSM9A
934056398127 Power Field-Effect Transistor Nexperia IRFZ34VSTRLPBF vs 934056398127
RFD16N02LSM 16A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ34VSTRLPBF vs RFD16N02LSM
RFD20N03SM Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Harris Semiconductor IRFZ34VSTRLPBF vs RFD20N03SM
BUK752R7-30B,127 N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin Nexperia IRFZ34VSTRLPBF vs BUK752R7-30B,127

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