Part Details for IRG4RC10UDPBF by Infineon Technologies AG
Overview of IRG4RC10UDPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4RC10UDPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
70018477
|
RS | 600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
|
$1.7900 | RFQ |
|
|
Rochester Electronics | IRG4RC10 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 161 |
|
$0.6285 / $0.7394 | Buy Now |
|
DISTI #
IRG4RC10UDPBF
|
TME | Transistor: IGBT, 600V, 8.5A, 38W, DPAK Min Qty: 1 | 0 |
|
$0.9500 / $1.4300 | RFQ |
Part Details for IRG4RC10UDPBF
IRG4RC10UDPBF CAD Models
IRG4RC10UDPBF Part Data Attributes:
|
|
IRG4RC10UDPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRG4RC10UDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, DPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8.5 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 210 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 345 ns | |
| Turn-on Time-Nom (ton) | 56 ns |
Alternate Parts for IRG4RC10UDPBF
This table gives cross-reference parts and alternative options found for IRG4RC10UDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC10UDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4RC10UDTR | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDTR |
| IRG4RC10UDPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDPBF |
| IRG4RC10UD | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | IRG4RC10UDPBF vs IRG4RC10UD |
| IRG4RC10UDTRLP | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDTRLP |
| IRG4RC10UDTRR | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDTRR |
| IRG4RC10UDTRPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDTRPBF |
| IRG4RC10UDTRRP | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDTRRP |
| IRG4RC10UDTRL | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UDPBF vs IRG4RC10UDTRL |
| IRG4RC10UDTRRP | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRG4RC10UDPBF vs IRG4RC10UDTRRP |