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Memory DRAMs IS43DR16160B-37CBLI

IS43DR16160B-37CBLI
Integrated Silicon Solution Inc
Description: DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, TWBGA-84

Overview of IS43DR16160B-37CBLI by Integrated Silicon Solution Inc

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Price & Stock for IS43DR16160B-37CBLI by Integrated Silicon Solution Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 706-1274-ND
DigiKey IC DRAM 256MBIT PAR 84TWBGA Min Qty: 1 Lead time: 6 Weeks Container: Tray 254
In Stock
  • 1 $4.7200
  • 10 $4.2840
  • 25 $4.1908
  • 40 $4.1682
  • 209 $3.7374
  • 418 $3.7238
  • 627 $3.5878
  • 1,045 $3.4108
$3.4108 / $4.7200 Buy Now
DISTI # IS43DR16160B-37CBL
Avnet Americas DRAMs Parts and Modules - Bulk (Alt: IS43DR16160B-37CBL) RoHS: Not Compliant Min Qty: 418 Package Multiple: 209 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 418 $2.5659
$2.5659 Buy Now
DISTI # 870-43DR16160B37CBLI
Mouser Electronics DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM RoHS: Compliant 125
  • 1 $4.6400
  • 10 $4.1600
  • 100 $3.8700
  • 209 $3.6600
  • 418 $3.5200
  • 1,045 $3.3500
$3.3500 / $4.6400 Buy Now
DISTI # IS43DR16160B-37CBLI
Avnet Silica DRAMs Parts and Modules (Alt: IS43DR16160B-37CBLI) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now

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Part Data Attributes for IS43DR16160B-37CBLI by Integrated Silicon Solution Inc
Parametric Data

IS43DR16160B-37CBLI
Integrated Silicon Solution Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Package Description
TFBGA, BGA84,9X15,32
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Integrated Silicon Solution Inc.
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.5 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
266 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
JESD-609 Code
e1
Length
12.5 mm
Memory Density
268435456 bit
Memory IC Type
DDR2 DRAM
Memory Width
16
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
84
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
Standby Current-Max
0.025 A
Supply Current-Max
0.26 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
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  1. IS43DR16160B-37CBLI
    Integrated Silicon Solution Inc
    DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, TWBGA-84
    VS

Alternate Parts for IS43DR16160B-37CBLI

This table gives cross-reference parts and alternative options found for IS43DR16160B-37CBLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43DR16160B-37CBLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT6V16M16F2-3C Rambus DRAM, 16MX16, CMOS, PBGA84, FBGA-84 Micron Technology Inc IS43DR16160B-37CBLI vs MT6V16M16F2-3C
MT47H16M16FG-37EIT:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc IS43DR16160B-37CBLI vs MT47H16M16FG-37EIT:B
K4R571669E-GCT90 Rambus DRAM, 16MX16, CMOS, PBGA84, LEAD FREE, WBGA-84 Samsung Semiconductor IS43DR16160B-37CBLI vs K4R571669E-GCT90
IS43DR16160A-37CBLI DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16160B-37CBLI vs IS43DR16160A-37CBLI
HY5PS561621F-33 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 SK Hynix Inc IS43DR16160B-37CBLI vs HY5PS561621F-33
K4T56163QI-ZCE60 Synchronous DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor IS43DR16160B-37CBLI vs K4T56163QI-ZCE60
HYB18T256160BF-3.7 DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG IS43DR16160B-37CBLI vs HYB18T256160BF-3.7
H5PS2562GFR-S6C DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 SK Hynix Inc IS43DR16160B-37CBLI vs H5PS2562GFR-S6C
MT47H16M16FG-37EL:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc IS43DR16160B-37CBLI vs MT47H16M16FG-37EL:B
HYB18T256160AF-5 DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Infineon Technologies AG IS43DR16160B-37CBLI vs HYB18T256160AF-5

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