Part Details for IXFE48N50QD3 by IXYS Corporation
Overview of IXFE48N50QD3 by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXFE48N50QD3
IXFE48N50QD3 CAD Models
IXFE48N50QD3 Part Data Attributes
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IXFE48N50QD3
IXYS Corporation
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Datasheet
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IXFE48N50QD3
IXYS Corporation
Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 41 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFE48N50QD3
This table gives cross-reference parts and alternative options found for IXFE48N50QD3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFE48N50QD3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT40M75JN | Power Field-Effect Transistor, 56A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFE48N50QD3 vs APT40M75JN |
| IXFN55N50F | Power Field-Effect Transistor, 55A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFE48N50QD3 vs IXFN55N50F |
| APT5012JNU2 | Power Field-Effect Transistor, 43A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Advanced Power Technology | IXFE48N50QD3 vs APT5012JNU2 |
| IXFX44N50Q | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXFE48N50QD3 vs IXFX44N50Q |
| IXFN64N50PD2 | Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFE48N50QD3 vs IXFN64N50PD2 |
| IXFN80N50Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFE48N50QD3 vs IXFN80N50Q3 |
| IXFN44N50Q | Power Field-Effect Transistor, 44A I(D), 500V, 120ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFE48N50QD3 vs IXFN44N50Q |
| BUK417-500BE | TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFE48N50QD3 vs BUK417-500BE |
| NDT453N/S62Z | 8A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | Texas Instruments | IXFE48N50QD3 vs NDT453N/S62Z |
| IXFE44N50QD3 | Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFE48N50QD3 vs IXFE44N50QD3 |