Datasheets
IXFP20N50P3 by:

Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

Part Details for IXFP20N50P3 by IXYS Corporation

Overview of IXFP20N50P3 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFP20N50P3

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFP20N50P3
Mouser Electronics MOSFETs TO220 500V 20A N-CH POLAR RoHS: Compliant 94
  • 1 $5.6100
  • 10 $4.8600
  • 50 $4.1200
  • 100 $3.7800
  • 250 $2.8200
  • 1,000 $2.8100
  • 2,500 $2.7300
$2.7300 / $5.6100 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 26 Weeks Container: Tube 0
Tube
  • 50 $2.7900
$2.7900 Buy Now
DISTI # IXFP20N50P3
TTI MOSFETs TO220 500V 20A N-CH POLAR Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $2.7900
  • 500 $2.7400
$2.7400 / $2.7900 Buy Now

Part Details for IXFP20N50P3

IXFP20N50P3 CAD Models

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IXFP20N50P3 Part Data Attributes

IXFP20N50P3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFP20N50P3 IXYS Corporation Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 380 W
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFP20N50P3

This table gives cross-reference parts and alternative options found for IXFP20N50P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFP20N50P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FMC20N50ES Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN Fuji Electric Co Ltd IXFP20N50P3 vs FMC20N50ES
IXFH20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN IXYS Corporation IXFP20N50P3 vs IXFH20N50P3
IXFQ20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation IXFP20N50P3 vs IXFQ20N50P3
IXFA20N50P3 Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN IXYS Corporation IXFP20N50P3 vs IXFA20N50P3
IXFQ20N50P3 Power Field-Effect Transistor, Littelfuse Inc IXFP20N50P3 vs IXFQ20N50P3

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