Part Details for K4N56163QF-ZC250 by Samsung Semiconductor
Overview of K4N56163QF-ZC250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4N56163QF-ZC250
K4N56163QF-ZC250 CAD Models
K4N56163QF-ZC250 Part Data Attributes
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K4N56163QF-ZC250
Samsung Semiconductor
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Datasheet
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K4N56163QF-ZC250
Samsung Semiconductor
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, LEAD FREE, FBGA-84
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA84,9X15,32 | |
Pin Count | 84 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
JESD-609 Code | e1 | |
Length | 13 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 2 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 84 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 95 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Supply Current-Max | 0.43 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 11 mm |
Alternate Parts for K4N56163QF-ZC250
This table gives cross-reference parts and alternative options found for K4N56163QF-ZC250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4N56163QF-ZC250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT6V16M16F2-3C | Rambus DRAM, 16MX16, CMOS, PBGA84, FBGA-84 | Micron Technology Inc | K4N56163QF-ZC250 vs MT6V16M16F2-3C |
MT47H16M16FG-37EIT:B | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | Micron Technology Inc | K4N56163QF-ZC250 vs MT47H16M16FG-37EIT:B |
K4R571669E-GCT90 | Rambus DRAM, 16MX16, CMOS, PBGA84, LEAD FREE, WBGA-84 | Samsung Semiconductor | K4N56163QF-ZC250 vs K4R571669E-GCT90 |
IS43DR16160A-37CBLI | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | K4N56163QF-ZC250 vs IS43DR16160A-37CBLI |
HY5PS561621F-33 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 | SK Hynix Inc | K4N56163QF-ZC250 vs HY5PS561621F-33 |
K4T56163QI-ZCE60 | Synchronous DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | K4N56163QF-ZC250 vs K4T56163QI-ZCE60 |
HYB18T256160BF-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | K4N56163QF-ZC250 vs HYB18T256160BF-3.7 |
H5PS2562GFR-S6C | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | SK Hynix Inc | K4N56163QF-ZC250 vs H5PS2562GFR-S6C |
MT47H16M16FG-37EL:B | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | Micron Technology Inc | K4N56163QF-ZC250 vs MT47H16M16FG-37EL:B |
HYB18T256160AF-5 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Infineon Technologies AG | K4N56163QF-ZC250 vs HYB18T256160AF-5 |