Part Details for K4S281632D-TI55 by Samsung Semiconductor
Overview of K4S281632D-TI55 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4S281632D-TI55
K4S281632D-TI55 CAD Models
K4S281632D-TI55 Part Data Attributes
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K4S281632D-TI55
Samsung Semiconductor
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Datasheet
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K4S281632D-TI55
Samsung Semiconductor
Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 183 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.22 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S281632D-TI55
This table gives cross-reference parts and alternative options found for K4S281632D-TI55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S281632D-TI55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AS4C8M16S-6TAN | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | K4S281632D-TI55 vs AS4C8M16S-6TAN |
| HYB39S128160DE-6 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | K4S281632D-TI55 vs HYB39S128160DE-6 |
| NT5SV8M16HS-6K | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | Nanya Technology Corporation | K4S281632D-TI55 vs NT5SV8M16HS-6K |
| K4S281632D-TC55 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632D-TI55 vs K4S281632D-TC55 |
| K4S281632I-TC600 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632D-TI55 vs K4S281632I-TC600 |
| K4S281632D-TC550 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632D-TI55 vs K4S281632D-TC550 |
| M12L128168A-6TIG2N | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Elite Semiconductor Memory Technology Inc | K4S281632D-TI55 vs M12L128168A-6TIG2N |
| NT5SV8M16HS-6KI | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | Nanya Technology Corporation | K4S281632D-TI55 vs NT5SV8M16HS-6KI |
| M12L128168A-6TG2N | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Elite Semiconductor Memory Technology Inc | K4S281632D-TI55 vs M12L128168A-6TG2N |
| K4S281632F-TC600 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, TSOP2-54 | Samsung Semiconductor | K4S281632D-TI55 vs K4S281632F-TC600 |