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Memory SRAMs K7J643682M-EI300

Memory
K7J643682M-EI300
Samsung Semiconductor
Description: DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

Overview of K7J643682M-EI300 by Samsung Semiconductor

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Part Data Attributes for K7J643682M-EI300 by Samsung Semiconductor
Parametric Data

K7J643682M-EI300
Samsung Semiconductor
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
LBGA, BGA165,11X15,40
Pin Count
165
Reach Compliance Code
compliant
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
0.45 ns
Additional Feature
PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK)
300 MHz
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
JESD-609 Code
e1
Length
17 mm
Memory Density
75497472 bit
Memory IC Type
DDR SRAM
Memory Width
36
Moisture Sensitivity Level
2
Number of Functions
1
Number of Terminals
165
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
2MX36
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Seated Height-Max
1.4 mm
Standby Voltage-Min
1.7 V
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
15 mm
Want to compare parts?
  1. K7J643682M-EI300
    Samsung Semiconductor
    DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
    VS

Alternate Parts for K7J643682M-EI300

This table gives cross-reference parts and alternative options found for K7J643682M-EI300. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7J643682M-EI300, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
CY7C1524JV18-300BZI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7J643682M-EI300 vs CY7C1524JV18-300BZI
K7J643682M-FI30T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 Samsung Semiconductor K7J643682M-EI300 vs K7J643682M-FI30T
K7J643682M-EI30 Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 Samsung Semiconductor K7J643682M-EI300 vs K7J643682M-EI30
K7J643682M-EI30T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 Samsung Semiconductor K7J643682M-EI300 vs K7J643682M-EI30T
CY7C1524JV18-300BZXI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7J643682M-EI300 vs CY7C1524JV18-300BZXI
CY7C1524AV18-300BZI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7J643682M-EI300 vs CY7C1524AV18-300BZI
K7J643682M-FI30 Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 Samsung Semiconductor K7J643682M-EI300 vs K7J643682M-FI30
CY7C1524AV18-300BZXI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7J643682M-EI300 vs CY7C1524AV18-300BZXI
K7J643682M-FI300 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7J643682M-EI300 vs K7J643682M-FI300
CY7C1524V18-300BZXI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1.4 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7J643682M-EI300 vs CY7C1524V18-300BZXI
Part Number Description Manufacturer Compare
GS8672Q36AE-200I Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165 GSI Technology K7J643682M-EI300 vs GS8672Q36AE-200I
GS8672Q37BGE-300I QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8672Q37BGE-300I
GS8662R36E-250I DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1MM PITCH, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8662R36E-250I
GS8672D37BE-300I Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8672D37BE-300I
GS81302T37E-450 DDR SRAM, 2MX36, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS81302T37E-450
GS8662T36GE-167IT DDR SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8662T36GE-167IT
GS8662R36BGD-167T Standard SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8662R36BGD-167T
GS8662R36GE-167T DDR SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8662R36GE-167T
GS81302T37E-400 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS81302T37E-400
GS8672Q37BGE-400IT QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7J643682M-EI300 vs GS8672Q37BGE-400IT

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