Part Details for M470T2864AZ3-LE6 by Samsung Semiconductor
Overview of M470T2864AZ3-LE6 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for M470T2864AZ3-LE6
M470T2864AZ3-LE6 CAD Models
M470T2864AZ3-LE6 Part Data Attributes
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M470T2864AZ3-LE6
Samsung Semiconductor
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Datasheet
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M470T2864AZ3-LE6
Samsung Semiconductor
DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XZMA-N200 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Moisture Sensitivity Level | 2 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.064 A | |
| Supply Current-Max | 1.58 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | ZIG-ZAG |
Alternate Parts for M470T2864AZ3-LE6
This table gives cross-reference parts and alternative options found for M470T2864AZ3-LE6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470T2864AZ3-LE6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYMP112S64P8-Y5 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | M470T2864AZ3-LE6 vs HYMP112S64P8-Y5 |
| HYS64T128021EDL-3S-B2 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SO-DIMM-200 | Qimonda AG | M470T2864AZ3-LE6 vs HYS64T128021EDL-3S-B2 |
| EBE11UE6ACUA-6E-E | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Elpida Memory Inc | M470T2864AZ3-LE6 vs EBE11UE6ACUA-6E-E |
| M470T2863RZ3-CF7 | DDR DRAM, 128MX64, 0.45ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470T2864AZ3-LE6 vs M470T2863RZ3-CF7 |
| WV3HG264M64EEU665D4MG | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | M470T2864AZ3-LE6 vs WV3HG264M64EEU665D4MG |
| M2N1G64TU8HB0B-3C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Nanya Technology Corporation | M470T2864AZ3-LE6 vs M2N1G64TU8HB0B-3C |
| EBE11UD8AJUA-6E-E | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Elpida Memory Inc | M470T2864AZ3-LE6 vs EBE11UD8AJUA-6E-E |
| W3HG128M64EEU665D4ISG | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | M470T2864AZ3-LE6 vs W3HG128M64EEU665D4ISG |
| NT1GT64UH8C0FN-3C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-200 | Nanya Technology Corporation | M470T2864AZ3-LE6 vs NT1GT64UH8C0FN-3C |
| M470T2864QZ3-CE6 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200 | Samsung Semiconductor | M470T2864AZ3-LE6 vs M470T2864QZ3-CE6 |