Part Details for MG300Q2YS65H by Toshiba America Electronic Components
Overview of MG300Q2YS65H by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG300Q2YS65H
MG300Q2YS65H CAD Models
MG300Q2YS65H Part Data Attributes:
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MG300Q2YS65H
Toshiba America Electronic Components
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Datasheet
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MG300Q2YS65H
Toshiba America Electronic Components
TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2700 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 600 ns | |
| Turn-on Time-Nom (ton) | 170 ns | |
| VCEsat-Max | 4 V |
Alternate Parts for MG300Q2YS65H
This table gives cross-reference parts and alternative options found for MG300Q2YS65H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300Q2YS65H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF200R12KT3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs FF200R12KT3HOSA1 |
| FF200R12KE4 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs FF200R12KE4 |
| BSM200GB120DN2 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs BSM200GB120DN2 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG300Q2YS65H vs CM300DU-24H |
| BSM150GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs BSM150GB120DLCHOSA1 |
| FF200R12KS4 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs FF200R12KS4 |
| APTGT200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | MG300Q2YS65H vs APTGT200A120D3G |
| BSM200GB120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, | Siemens | MG300Q2YS65H vs BSM200GB120DN2 |
| BSM150GB120DLC | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs BSM150GB120DLC |
| BSM100GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300Q2YS65H vs BSM100GB120DLCHOSA1 |