Part Details for MMDF2C02ER2 by onsemi
Overview of MMDF2C02ER2 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MMDF2C02ER2
MMDF2C02ER2 CAD Models
MMDF2C02ER2 Part Data Attributes
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MMDF2C02ER2
onsemi
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Datasheet
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MMDF2C02ER2
onsemi
3.6A, 25V, 0.1ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOT | |
| Package Description | MINIATURE, CASE 751-07, SO-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF2C02ER2
This table gives cross-reference parts and alternative options found for MMDF2C02ER2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C02ER2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9952PBF | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | MMDF2C02ER2 vs IRF9952PBF |
| MMDF2C03HD | 2A, 30V, 0.09ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | Motorola Mobility LLC | MMDF2C02ER2 vs MMDF2C03HD |
| IRF9952TR | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | MMDF2C02ER2 vs IRF9952TR |
| IRF7317 | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | MMDF2C02ER2 vs IRF7317 |
| F4H3C | Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | MMDF2C02ER2 vs F4H3C |
| NDS9958L99Z | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF2C02ER2 vs NDS9958L99Z |
| NDS9958S62Z | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF2C02ER2 vs NDS9958S62Z |
| NDS9958 | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF2C02ER2 vs NDS9958 |
| RF1K49224 | 2.5A, 30V, 0.132ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | Rochester Electronics LLC | MMDF2C02ER2 vs RF1K49224 |
| IRF9952 | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | MMDF2C02ER2 vs IRF9952 |