Datasheets
MMDF2N02E by:

3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8

Part Details for MMDF2N02E by Motorola Mobility LLC

Overview of MMDF2N02E by Motorola Mobility LLC

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Part Details for MMDF2N02E

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MMDF2N02E Part Data Attributes

MMDF2N02E Motorola Mobility LLC
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MMDF2N02E Motorola Mobility LLC 3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code CASE 751-05
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 245 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 3.6 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for MMDF2N02E

This table gives cross-reference parts and alternative options found for MMDF2N02E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2N02E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF2N02ER2G Power MOSFET 25V 3.6A 100 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF2N02E vs MMDF2N02ER2G
MMDF2N02ER2 Power MOSFET 25V 3.6A 100 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF2N02E vs MMDF2N02ER2
Part Number Description Manufacturer Compare
FDS6892A Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN Fairchild Semiconductor Corporation MMDF2N02E vs FDS6892A
IRF7416QPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier MMDF2N02E vs IRF7416QPBF
MMSF4P01HD Power Field-Effect Transistor, 4A I(D), 12V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF2N02E vs MMSF4P01HD
IRF7303TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 International Rectifier MMDF2N02E vs IRF7303TRPBF
IRF7416GPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier MMDF2N02E vs IRF7416GPBF
IRF7404PBF Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF2N02E vs IRF7404PBF
FDS4935A Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF2N02E vs FDS4935A
934055451118 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power NXP Semiconductors MMDF2N02E vs 934055451118
IRF7401TRPBF Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier MMDF2N02E vs IRF7401TRPBF
IRF7306PBF Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF2N02E vs IRF7306PBF

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