Datasheets
MMST2222A by:

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 0.6V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.2W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323

Part Details for MMST2222A by Galaxy Microelectronics

Overview of MMST2222A by Galaxy Microelectronics

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Applications Consumer Electronics Audio and Video Systems

Part Details for MMST2222A

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MMST2222A Part Data Attributes

MMST2222A Galaxy Microelectronics
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MMST2222A Galaxy Microelectronics General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 0.6V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.2W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SOT-323
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 300 MHz
Turn-off Time-Max (toff) 285 ns
Turn-on Time-Max (ton) 35 ns

Alternate Parts for MMST2222A

This table gives cross-reference parts and alternative options found for MMST2222A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMST2222A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBT2222ALT1 Transistor Shandong Yiguang Electronic Joint Stock Co Ltd MMST2222A vs MMBT2222ALT1
MMST2222A-G Transistor, Comchip Technology Corporation Ltd MMST2222A vs MMST2222A-G
MMBT2222AT General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 1V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.15W; Package: SOT-523; package_code: SOT-523; mfr_package_code: SOT-523 Galaxy Microelectronics MMST2222A vs MMBT2222AT
MMBT2222A General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 0.6V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMST2222A vs MMBT2222A
MMBT2222A Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMST2222A vs MMBT2222A
MMBT2222A Small Signal Bipolar Transistor, Suzhou Good-Ark Electronics Co Ltd MMST2222A vs MMBT2222A
Part Number Description Manufacturer Compare
MMBT2222A General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 0.6V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMST2222A vs MMBT2222A
MMBT2222A Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMST2222A vs MMBT2222A
MMBT2222AT General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 1V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.15W; Package: SOT-523; package_code: SOT-523; mfr_package_code: SOT-523 Galaxy Microelectronics MMST2222A vs MMBT2222AT
MMBT2222A Small Signal Bipolar Transistor, Suzhou Good-Ark Electronics Co Ltd MMST2222A vs MMBT2222A
MMST2222AF2 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMST2222A vs MMST2222AF2
SMMBT2222AWT1G NPN Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL, Automotive Qualified onsemi MMST2222A vs SMMBT2222AWT1G

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