Part Details for MTB50N06VL by onsemi
Overview of MTB50N06VL by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for MTB50N06VL
MTB50N06VL CAD Models
MTB50N06VL Part Data Attributes:
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MTB50N06VL
onsemi
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Datasheet
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MTB50N06VL
onsemi
42A, 60V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 265 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 147 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTB50N06VL
This table gives cross-reference parts and alternative options found for MTB50N06VL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB50N06VL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTB50N06ELT4 | 50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 | Motorola Mobility LLC | MTB50N06VL vs MTB50N06ELT4 |
| MTB50N06V | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTB50N06VL vs MTB50N06V |
| MTB50N06ELT4 | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 418B-02, D2PAK-3 | Motorola Semiconductor Products | MTB50N06VL vs MTB50N06ELT4 |
| MTB50N06VT4 | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTB50N06VL vs MTB50N06VT4 |
| MTB50N06ET4 | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 | Motorola Mobility LLC | MTB50N06VL vs MTB50N06ET4 |
| MTB50N06E | 50A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 | Motorola Mobility LLC | MTB50N06VL vs MTB50N06E |
| MTB50N06VL | 42A, 60V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTB50N06VL vs MTB50N06VL |