Part Details for MTP40N10E by Rochester Electronics LLC
Overview of MTP40N10E by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MTP40N10E
MTP40N10E CAD Models
MTP40N10E Part Data Attributes:
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MTP40N10E
Rochester Electronics LLC
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Datasheet
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MTP40N10E
Rochester Electronics LLC
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, CASE 221A-09, 3 PIN
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTP40N10E
This table gives cross-reference parts and alternative options found for MTP40N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP40N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NP40N10VDF-E1-AY | Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape | Renesas Electronics Corporation | MTP40N10E vs NP40N10VDF-E1-AY |
| NDB710BEL86Z | Power Field-Effect Transistor, 40A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | MTP40N10E vs NDB710BEL86Z |
| NP40N10PDF-E1-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | MTP40N10E vs NP40N10PDF-E1-AY |
| IRL2310PBF | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | MTP40N10E vs IRL2310PBF |
| 2SK3646-01SJ | Power Field-Effect Transistor, 41A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fuji Electric Co Ltd | MTP40N10E vs 2SK3646-01SJ |
| NDB710AEL86Z | Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | MTP40N10E vs NDB710AEL86Z |