Part Details for NDT452AP/L99Z by Texas Instruments
Overview of NDT452AP/L99Z by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for NDT452AP/L99Z
NDT452AP/L99Z CAD Models
NDT452AP/L99Z Part Data Attributes:
|
NDT452AP/L99Z
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
NDT452AP/L99Z
Texas Instruments
5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261 | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.1 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 90 ns | |
Turn-on Time-Max (ton) | 50 ns |
Alternate Parts for NDT452AP/L99Z
This table gives cross-reference parts and alternative options found for NDT452AP/L99Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT452AP/L99Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
934033450115 | Power Field-Effect Transistor | Nexperia | NDT452AP/L99Z vs 934033450115 |
FX30ASJ-03 | Power Field-Effect Transistor, 30A I(D), 30V, 0.061ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Mitsubishi Electric | NDT452AP/L99Z vs FX30ASJ-03 |
FDT458P_NL | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT452AP/L99Z vs FDT458P_NL |
BSP250-TAPE-7 | TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | NDT452AP/L99Z vs BSP250-TAPE-7 |
NDT452AP | 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET | Rochester Electronics LLC | NDT452AP/L99Z vs NDT452AP |
BSP250 | TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power | NXP Semiconductors | NDT452AP/L99Z vs BSP250 |
934033450135 | Power Field-Effect Transistor | Nexperia | NDT452AP/L99Z vs 934033450135 |
BSP250-T | Power Field-Effect Transistor | Nexperia | NDT452AP/L99Z vs BSP250-T |
BSP250,135 | BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin | Nexperia | NDT452AP/L99Z vs BSP250,135 |
NDT452AP_NL | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT452AP/L99Z vs NDT452AP_NL |