Datasheets
NE5517N by:

IC DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP16, 0.300 INCH, PLASTIC, SOT38-4, DIP-16, Operational Amplifier

Part Details for NE5517N by NXP Semiconductors

Overview of NE5517N by NXP Semiconductors

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for NE5517N

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NE5517N Part Data Attributes:

NE5517N NXP Semiconductors
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NE5517N NXP Semiconductors IC DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP16, 0.300 INCH, PLASTIC, SOT38-4, DIP-16, Operational Amplifier
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code DIP
Package Description 0.300 INCH, PLASTIC, SOT38-4, DIP-16
Pin Count 16
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER
Architecture TRANSCONDUCTANCE
Average Bias Current-Max (IIB) 8 µA
Bias Current-Max (IIB) @25C 5 µA
Common-mode Reject Ratio-Nom 110 dB
Frequency Compensation YES
Input Offset Voltage-Max 5000 µV
JESD-30 Code R-PDIP-T16
Length 19.025 mm
Low-Offset NO
Moisture Sensitivity Level 1
Neg Supply Voltage Limit-Max -22 V
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 2
Number of Terminals 16
Operating Temperature-Max 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP16,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Seated Height-Max 4.2 mm
Slew Rate-Nom 50 V/us
Supply Current-Max 4 mA
Supply Voltage Limit-Max 22 V
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO
Technology BIPOLAR
Temperature Grade COMMERCIAL
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Unity Gain BW-Nom 2000
Width 7.62 mm

Alternate Parts for NE5517N

This table gives cross-reference parts and alternative options found for NE5517N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE5517N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE5517N Dual Transconductance Amplifier, PDIP-16, 25-TUBE onsemi NE5517N vs NE5517N
Part Number Description Manufacturer Compare
LM13700N IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP16, PLASTIC, DIP-16, Operational Amplifier National Semiconductor Corporation NE5517N vs LM13700N
LM13700AN DUAL OP-AMP, 2000uV OFFSET-MAX, 2MHz BAND WIDTH, PDIP16, PLASTIC, DIP16 Texas Instruments NE5517N vs LM13700AN
LM13700AN DUAL OP-AMP, 2000uV OFFSET-MAX, 2MHz BAND WIDTH, PDIP16, PLASTIC, DIP16 Rochester Electronics LLC NE5517N vs LM13700AN
NJM13600D Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16, DIP-16 New Japan Radio Co Ltd NE5517N vs NJM13600D
CA3280E Operational Amplifier, 2 Func, 4000uV Offset-Max, BIPolar, PDIP16, PLASTIC, DIP-16 Harris Semiconductor NE5517N vs CA3280E
CA3280E DUAL OP-AMP, 4000uV OFFSET-MAX, 9MHz BAND WIDTH, PDIP16, PLASTIC, DIP-16 Intersil Corporation NE5517N vs CA3280E
LM13600N DUAL OP-AMP, 4000uV OFFSET-MAX, 2MHz BAND WIDTH, PDIP16, PLASTIC, DIP-16 Rochester Electronics LLC NE5517N vs LM13600N
CA3280AF3 Operational Amplifier, 2 Func, 1500uV Offset-Max, BIPolar, CDIP16, CERDIP-16 Harris Semiconductor NE5517N vs CA3280AF3
LM13600AN IC DUAL OP-AMP, 1000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP16, PLASTIC, DIP-16, Operational Amplifier National Semiconductor Corporation NE5517N vs LM13600AN
CA3280AE Operational Amplifier, 2 Func, 1500uV Offset-Max, BIPolar, PDIP16, PLASTIC, DIP-16 Harris Semiconductor NE5517N vs CA3280AE

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